Analysis of C-V and I-V data of BST thin films

Thin films of Ba 0.7 Sr 0.3 TiO 3 have been fabricated using Enhanced Metal Organic Decomposition (EMOD) process on Si/SiO 2 /Ti/Pt substrates. The C-V characteristics of these films reveal a relation of log(1/C m ) ∝ V A where C m is the measured capacitance at a frequency of 10 KHz and V A is the...

Full description

Saved in:
Bibliographic Details
Published in:Integrated ferroelectrics 1997-01, Vol.14 (1-4), p.133-140
Main Authors: Joshi, V., Dacruz, C. P., Cuchiaro, J. D., Araujo, C. A., Zuleeg, R.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Thin films of Ba 0.7 Sr 0.3 TiO 3 have been fabricated using Enhanced Metal Organic Decomposition (EMOD) process on Si/SiO 2 /Ti/Pt substrates. The C-V characteristics of these films reveal a relation of log(1/C m ) ∝ V A where C m is the measured capacitance at a frequency of 10 KHz and V A is the applied voltage. This voltage variable capacitance is characterized by an inverse quadratic distance proportinal charge distribution at the boundary layer between metal and paraelectric material. Above a threshold voltage of 3-5 V the leakage current density exhibits a modified Schottky emission, which states that log (J L ) ∝ V 1/4 . Below this threshold voltage, the origin of the leakage current which is operative in normal circuit applications has been discussed and identified from its temperature variation.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584589708019985