Performances analysis of heterojunction solar cells through integration of hydrogenated nanocrystalline silicon bilayer by using numerical study

This study was conducted to simulate a pin-type thin film solar cell by integrating nc-Si:H as p-window and buffer layers. The structures proposed to investigated are ITO/(p)nc-Si:H/((i)a-Si:H/(n)a-Si:H/Ag and ITO/(p)nc-Si:H/(p')nc-Si:H(buff)/(i)a-Si:H/(n)a-Si:H/Ag simulated with the AFORS-HET...

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Bibliographic Details
Published in:Molecular Crystals and Liquid Crystals 2021-08, Vol.725 (1), p.91-110, Article 91
Main Authors: Hamdani, Dadan, Cahyono, Yoyok, Yudoyono, Gatut, Darminto, Darminto
Format: Article
Language:English
Subjects:
Absorbers
AFORS-HET
Bilayers
buffer layer
Buffer layers
Energy gap
Heterojunctions
nc-Si:H
Optical properties
p/i interface
Photovoltaic cells
Silicon
Simulation
Solar cells
Thickness
thin film solar cells
Thin films
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Summary:This study was conducted to simulate a pin-type thin film solar cell by integrating nc-Si:H as p-window and buffer layers. The structures proposed to investigated are ITO/(p)nc-Si:H/((i)a-Si:H/(n)a-Si:H/Ag and ITO/(p)nc-Si:H/(p')nc-Si:H(buff)/(i)a-Si:H/(n)a-Si:H/Ag simulated with the AFORS-HET simulator. In an effort to improve the electrical and optical properties of the heterojunction solar cell, the dopant concentration for the p-window and n-layers, the absorber bandgap, and the absorber thickness were optimized. The result showed that the E ff of p-p'-i-n is 9.60% (V OC = 936.6 mV, J SC = 13.86 mA/cm 2 , FF = 0.738) were obtained when values of Na, Nd, absorber bandgap, and absorber thickness parameters are 1.0 x 10 17 particles/cm 3 , 1.0 x 10 19 particles/cm 3 , 1.80 eV, and 600 nm, respectively.
ISSN:1542-1406
1563-5287
1563-5287
1527-1943
DOI:10.1080/15421406.2021.1922226