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Performances analysis of heterojunction solar cells through integration of hydrogenated nanocrystalline silicon bilayer by using numerical study
This study was conducted to simulate a pin-type thin film solar cell by integrating nc-Si:H as p-window and buffer layers. The structures proposed to investigated are ITO/(p)nc-Si:H/((i)a-Si:H/(n)a-Si:H/Ag and ITO/(p)nc-Si:H/(p')nc-Si:H(buff)/(i)a-Si:H/(n)a-Si:H/Ag simulated with the AFORS-HET...
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Published in: | Molecular Crystals and Liquid Crystals 2021-08, Vol.725 (1), p.91-110, Article 91 |
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container_start_page | 91 |
container_title | Molecular Crystals and Liquid Crystals |
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creator | Hamdani, Dadan Cahyono, Yoyok Yudoyono, Gatut Darminto, Darminto |
description | This study was conducted to simulate a pin-type thin film solar cell by integrating nc-Si:H as p-window and buffer layers. The structures proposed to investigated are ITO/(p)nc-Si:H/((i)a-Si:H/(n)a-Si:H/Ag and ITO/(p)nc-Si:H/(p')nc-Si:H(buff)/(i)a-Si:H/(n)a-Si:H/Ag simulated with the AFORS-HET simulator. In an effort to improve the electrical and optical properties of the heterojunction solar cell, the dopant concentration for the p-window and n-layers, the absorber bandgap, and the absorber thickness were optimized. The result showed that the E
ff
of p-p'-i-n is 9.60% (V
OC
= 936.6 mV, J
SC
= 13.86 mA/cm
2
, FF = 0.738) were obtained when values of Na, Nd, absorber bandgap, and absorber thickness parameters are 1.0 x 10
17
particles/cm
3
, 1.0 x 10
19
particles/cm
3
, 1.80 eV, and 600 nm, respectively. |
doi_str_mv | 10.1080/15421406.2021.1922226 |
format | article |
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ff
of p-p'-i-n is 9.60% (V
OC
= 936.6 mV, J
SC
= 13.86 mA/cm
2
, FF = 0.738) were obtained when values of Na, Nd, absorber bandgap, and absorber thickness parameters are 1.0 x 10
17
particles/cm
3
, 1.0 x 10
19
particles/cm
3
, 1.80 eV, and 600 nm, respectively.</description><identifier>ISSN: 1542-1406</identifier><identifier>ISSN: 1563-5287</identifier><identifier>EISSN: 1563-5287</identifier><identifier>EISSN: 1527-1943</identifier><identifier>DOI: 10.1080/15421406.2021.1922226</identifier><language>eng</language><publisher>Philadelphia: Taylor & Francis</publisher><subject>Absorbers ; AFORS-HET ; Bilayers ; buffer layer ; Buffer layers ; Energy gap ; Heterojunctions ; nc-Si:H ; Optical properties ; p/i interface ; Photovoltaic cells ; Silicon ; Simulation ; Solar cells ; Thickness ; thin film solar cells ; Thin films</subject><ispartof>Molecular Crystals and Liquid Crystals, 2021-08, Vol.725 (1), p.91-110, Article 91</ispartof><rights>2021 Taylor & Francis Group, LLC 2021</rights><rights>2021 Taylor & Francis Group, LLC</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c338t-e8bc2452c8560f1c496c1a8121d893e5acc0caa141b8ff4bc7529928b15d82783</citedby><cites>FETCH-LOGICAL-c338t-e8bc2452c8560f1c496c1a8121d893e5acc0caa141b8ff4bc7529928b15d82783</cites><orcidid>0000-0002-6269-9246 ; 0000-0003-1115-1560 ; 0000-0002-5370-0559</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Hamdani, Dadan</creatorcontrib><creatorcontrib>Cahyono, Yoyok</creatorcontrib><creatorcontrib>Yudoyono, Gatut</creatorcontrib><creatorcontrib>Darminto, Darminto</creatorcontrib><title>Performances analysis of heterojunction solar cells through integration of hydrogenated nanocrystalline silicon bilayer by using numerical study</title><title>Molecular Crystals and Liquid Crystals</title><description>This study was conducted to simulate a pin-type thin film solar cell by integrating nc-Si:H as p-window and buffer layers. The structures proposed to investigated are ITO/(p)nc-Si:H/((i)a-Si:H/(n)a-Si:H/Ag and ITO/(p)nc-Si:H/(p')nc-Si:H(buff)/(i)a-Si:H/(n)a-Si:H/Ag simulated with the AFORS-HET simulator. In an effort to improve the electrical and optical properties of the heterojunction solar cell, the dopant concentration for the p-window and n-layers, the absorber bandgap, and the absorber thickness were optimized. The result showed that the E
ff
of p-p'-i-n is 9.60% (V
OC
= 936.6 mV, J
SC
= 13.86 mA/cm
2
, FF = 0.738) were obtained when values of Na, Nd, absorber bandgap, and absorber thickness parameters are 1.0 x 10
17
particles/cm
3
, 1.0 x 10
19
particles/cm
3
, 1.80 eV, and 600 nm, respectively.</description><subject>Absorbers</subject><subject>AFORS-HET</subject><subject>Bilayers</subject><subject>buffer layer</subject><subject>Buffer layers</subject><subject>Energy gap</subject><subject>Heterojunctions</subject><subject>nc-Si:H</subject><subject>Optical properties</subject><subject>p/i interface</subject><subject>Photovoltaic cells</subject><subject>Silicon</subject><subject>Simulation</subject><subject>Solar cells</subject><subject>Thickness</subject><subject>thin film solar cells</subject><subject>Thin films</subject><issn>1542-1406</issn><issn>1563-5287</issn><issn>1563-5287</issn><issn>1527-1943</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNqFkc9q3DAQh01poWmSRwgIevZWI0temV5aQv9BoD2kZzGW5V0tWikdyRS_RR-59m566SGZiwb0-wbmm6q6Ab4Brvk7UFKA5O1GcAEb6MRS7YvqAlTb1Ero7cu1l6JeQ6-rNzkfOBdyC_qi-vPD0ZjoiNG6zDBimLPPLI1s74qjdJiiLT5FllNAYtaFkFnZU5p2e-ZjcTvC0_9KzAOlnYtY3MAixmRpzgVD8NGx7IO3S673AWdHrJ_ZlH3csTgdHXmLgeUyDfNV9WrEkN3143tZ_fz86f72a333_cu32493tW0aXWqneyukElarlo9gZddaQA0CBt01TqG13CKChF6Po-ztVomuE7oHNWix1c1l9fY894HSr8nlYg5pomX_bEQLsmsU79aUOqcspZzJjeaB_BFpNsDNKt_8k29W-eZR_sK9_4-zvpxEFUIfnqU_nGkfT7f5nSgMpuAcEo20nMpn0zw94i9EnqGo</recordid><startdate>20210813</startdate><enddate>20210813</enddate><creator>Hamdani, Dadan</creator><creator>Cahyono, Yoyok</creator><creator>Yudoyono, Gatut</creator><creator>Darminto, Darminto</creator><general>Taylor & Francis</general><general>Taylor & Francis Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-6269-9246</orcidid><orcidid>https://orcid.org/0000-0003-1115-1560</orcidid><orcidid>https://orcid.org/0000-0002-5370-0559</orcidid></search><sort><creationdate>20210813</creationdate><title>Performances analysis of heterojunction solar cells through integration of hydrogenated nanocrystalline silicon bilayer by using numerical study</title><author>Hamdani, Dadan ; Cahyono, Yoyok ; Yudoyono, Gatut ; Darminto, Darminto</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-e8bc2452c8560f1c496c1a8121d893e5acc0caa141b8ff4bc7529928b15d82783</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Absorbers</topic><topic>AFORS-HET</topic><topic>Bilayers</topic><topic>buffer layer</topic><topic>Buffer layers</topic><topic>Energy gap</topic><topic>Heterojunctions</topic><topic>nc-Si:H</topic><topic>Optical properties</topic><topic>p/i interface</topic><topic>Photovoltaic cells</topic><topic>Silicon</topic><topic>Simulation</topic><topic>Solar cells</topic><topic>Thickness</topic><topic>thin film solar cells</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hamdani, Dadan</creatorcontrib><creatorcontrib>Cahyono, Yoyok</creatorcontrib><creatorcontrib>Yudoyono, Gatut</creatorcontrib><creatorcontrib>Darminto, Darminto</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Molecular Crystals and Liquid Crystals</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hamdani, Dadan</au><au>Cahyono, Yoyok</au><au>Yudoyono, Gatut</au><au>Darminto, Darminto</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Performances analysis of heterojunction solar cells through integration of hydrogenated nanocrystalline silicon bilayer by using numerical study</atitle><jtitle>Molecular Crystals and Liquid Crystals</jtitle><date>2021-08-13</date><risdate>2021</risdate><volume>725</volume><issue>1</issue><spage>91</spage><epage>110</epage><pages>91-110</pages><artnum>91</artnum><issn>1542-1406</issn><issn>1563-5287</issn><eissn>1563-5287</eissn><eissn>1527-1943</eissn><abstract>This study was conducted to simulate a pin-type thin film solar cell by integrating nc-Si:H as p-window and buffer layers. The structures proposed to investigated are ITO/(p)nc-Si:H/((i)a-Si:H/(n)a-Si:H/Ag and ITO/(p)nc-Si:H/(p')nc-Si:H(buff)/(i)a-Si:H/(n)a-Si:H/Ag simulated with the AFORS-HET simulator. In an effort to improve the electrical and optical properties of the heterojunction solar cell, the dopant concentration for the p-window and n-layers, the absorber bandgap, and the absorber thickness were optimized. The result showed that the E
ff
of p-p'-i-n is 9.60% (V
OC
= 936.6 mV, J
SC
= 13.86 mA/cm
2
, FF = 0.738) were obtained when values of Na, Nd, absorber bandgap, and absorber thickness parameters are 1.0 x 10
17
particles/cm
3
, 1.0 x 10
19
particles/cm
3
, 1.80 eV, and 600 nm, respectively.</abstract><cop>Philadelphia</cop><pub>Taylor & Francis</pub><doi>10.1080/15421406.2021.1922226</doi><tpages>20</tpages><orcidid>https://orcid.org/0000-0002-6269-9246</orcidid><orcidid>https://orcid.org/0000-0003-1115-1560</orcidid><orcidid>https://orcid.org/0000-0002-5370-0559</orcidid></addata></record> |
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source | Taylor and Francis Science and Technology Collection; MLA International Bibliography with Full Text |
subjects | Absorbers AFORS-HET Bilayers buffer layer Buffer layers Energy gap Heterojunctions nc-Si:H Optical properties p/i interface Photovoltaic cells Silicon Simulation Solar cells Thickness thin film solar cells Thin films |
title | Performances analysis of heterojunction solar cells through integration of hydrogenated nanocrystalline silicon bilayer by using numerical study |
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