Effect of thermal annealing on GaN pn-junction diode with Pt/Ag as ohmic contact

In this paper, the effect of thermal annealing on gallium nitride (GaN) pn-junction photodiode grown on Si(1 1 1) by RF-plasma assisted molecular beam epitaxy is described. Platinum (Pt) and silver (Ag) were used as ohmic contact for GaN pn-junction photodetector. The structural evolution and temper...

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Bibliographic Details
Published in:Composite interfaces 2014-06, Vol.21 (5), p.371-380
Main Authors: Mohd Yusoff, M.Z., Baharin, A., Hassan, Z., M. Ahmed, Naser, Abu Hassan, H., Abdullah, M.J.
Format: Article
Language:English
Subjects:
GaN
MBE
PN-junction diodes
semiconductor devices
XRD
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Summary:In this paper, the effect of thermal annealing on gallium nitride (GaN) pn-junction photodiode grown on Si(1 1 1) by RF-plasma assisted molecular beam epitaxy is described. Platinum (Pt) and silver (Ag) were used as ohmic contact for GaN pn-junction photodetector. The structural evolution and temperature dependence of the current of Pt/Ag contacts on GaN pn-junction at various annealing were investigated by scanning electron microscopy, atomic force microscopy, high resolution X-ray diffraction, and current-voltage (I-V) measurements, respectively. The temperature dependence of the current may be attributed to changes of the surface morphology and surface roughness of Pt/Ag contacts on the sample. The lower surface roughness was achieved at thermal annealing temperature of 700 °C.
ISSN:0927-6440
1568-5543
DOI:10.1080/15685543.2014.864942