Low temperature processed, highly stable CMOS inverter by integrating Zn-ON and tellurium thin-film transistors

Semiconductors processed at low temperature for complementary metal-oxide semiconductors (CMOS) devices are receiving considerable attention in the field of integrated electronic applications. In this work, we demonstrated a CMOS inverter constructed by n-type ZnON and p-type Te TFTs where all the p...

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Bibliographic Details
Published in:Journal of Information Display 2023, 24(3), , pp.199-204
Main Authors: Naqi, Muhammad, Jang, Seong Cheol, Cho, Yongin, Park, Ji Min, Oh, Joo On, Rho, Hyun Yeol, Kim, Hyun-Suk, Kim, Sunkook
Format: Article
Language:English
Subjects:
Circuits
CMOS
CMOS inverter
Electrical measurement
Engineering
Gas flow
high mobility
High voltages
Inverters
Low temperature
Materials science
Semiconductor devices
Semiconductors
Spectrum analysis
Tellurium
Temperature
Thin film transistors
Transistors
Voltage gain
Zinc oxides
ZnON
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Summary:Semiconductors processed at low temperature for complementary metal-oxide semiconductors (CMOS) devices are receiving considerable attention in the field of integrated electronic applications. In this work, we demonstrated a CMOS inverter constructed by n-type ZnON and p-type Te TFTs where all the processes have been done at low temperature. The electrical measurements of proposed TFTs exhibit high mobility (> 100 and > 3 cm 2 /Vs in case of ZnON and Te TFTs, respectively) and a stable on/off current ratio. The resulted CMOS inverter exhibits a high voltage swing and a high voltage gain of 15.89. Since all the synthesis and fabrication processes are performed at low temperatures with easy processing techniques, the results may open new opportunities in the field of integrated electronics field.
ISSN:1598-0316
2158-1606
DOI:10.1080/15980316.2023.2174195