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Low temperature processed, highly stable CMOS inverter by integrating Zn-ON and tellurium thin-film transistors
Semiconductors processed at low temperature for complementary metal-oxide semiconductors (CMOS) devices are receiving considerable attention in the field of integrated electronic applications. In this work, we demonstrated a CMOS inverter constructed by n-type ZnON and p-type Te TFTs where all the p...
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| Published in: | Journal of Information Display 2023, 24(3), , pp.199-204 |
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| Main Authors: | , , , , , , , |
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| cited_by | cdi_FETCH-LOGICAL-c486t-1c371cc17067631c5ee95fec94c8c1322ab8f4680121a68e560f25207edc3db83 |
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| cites | cdi_FETCH-LOGICAL-c486t-1c371cc17067631c5ee95fec94c8c1322ab8f4680121a68e560f25207edc3db83 |
| container_end_page | 204 |
| container_issue | 3 |
| container_start_page | 199 |
| container_title | Journal of Information Display |
| container_volume | 24 |
| creator | Naqi, Muhammad Jang, Seong Cheol Cho, Yongin Park, Ji Min Oh, Joo On Rho, Hyun Yeol Kim, Hyun-Suk Kim, Sunkook |
| description | Semiconductors processed at low temperature for complementary metal-oxide semiconductors (CMOS) devices are receiving considerable attention in the field of integrated electronic applications. In this work, we demonstrated a CMOS inverter constructed by n-type ZnON and p-type Te TFTs where all the processes have been done at low temperature. The electrical measurements of proposed TFTs exhibit high mobility (> 100 and > 3 cm
2
/Vs in case of ZnON and Te TFTs, respectively) and a stable on/off current ratio. The resulted CMOS inverter exhibits a high voltage swing and a high voltage gain of 15.89. Since all the synthesis and fabrication processes are performed at low temperatures with easy processing techniques, the results may open new opportunities in the field of integrated electronics field. |
| doi_str_mv | 10.1080/15980316.2023.2174195 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1080_15980316_2023_2174195</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><doaj_id>oai_doaj_org_article_33c391107b964483b41289d0fb407a3e</doaj_id><sourcerecordid>2831678147</sourcerecordid><originalsourceid>FETCH-LOGICAL-c486t-1c371cc17067631c5ee95fec94c8c1322ab8f4680121a68e560f25207edc3db83</originalsourceid><addsrcrecordid>eNp9kUGP0zAQhSMEEtXu_gQkS9wQ6Xpsx3FurCoWKhUqwXLhYjmOnbqbxsV2WPXf4zYLR-Yyo9H3nuV5RfEG8BKwwLdQNQJT4EuCCV0SqBk01YtiQaASJXDMXxaLM1OeodfFTYx7nIs1uBGwKPzGP6FkDkcTVJqCQcfgtYnRdO_RzvW74YRiUu1g0OrL9jty428TkgmoPeU5mT6r3Nijn2O5_YrU2GWvYZiCmw4o7dxYWjfkKagxuph8iNfFK6uGaG6e-1Xx4_7jw-pzudl-Wq_uNqVmgqcSNK1Ba6gxrzkFXRnTVNbohmmhgRKiWmEZFxgIKC5MxbElFcG16TTtWkGvinez7xisfNROeuUuvffyMci7bw9rCZjihuEqw-sZ7rzay2NwBxVOF8Vl4UMvVUhOD0ZSqmkDgOu24YwJ2jIgoumwbRmuFTXZ6-3slQ_5azIxyb2fwpj_KonIEdQCWJ2paqZ08DEGY_-9Cliec5V_c5XnXOVzrln3Yda50fpwUE8-DJ1M6jT4YPOVtYuS_t_iD6ZZp6o</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2831678147</pqid></control><display><type>article</type><title>Low temperature processed, highly stable CMOS inverter by integrating Zn-ON and tellurium thin-film transistors</title><source>Taylor & Francis Open Access</source><source>Publicly Available Content Database</source><creator>Naqi, Muhammad ; Jang, Seong Cheol ; Cho, Yongin ; Park, Ji Min ; Oh, Joo On ; Rho, Hyun Yeol ; Kim, Hyun-Suk ; Kim, Sunkook</creator><creatorcontrib>Naqi, Muhammad ; Jang, Seong Cheol ; Cho, Yongin ; Park, Ji Min ; Oh, Joo On ; Rho, Hyun Yeol ; Kim, Hyun-Suk ; Kim, Sunkook</creatorcontrib><description>Semiconductors processed at low temperature for complementary metal-oxide semiconductors (CMOS) devices are receiving considerable attention in the field of integrated electronic applications. In this work, we demonstrated a CMOS inverter constructed by n-type ZnON and p-type Te TFTs where all the processes have been done at low temperature. The electrical measurements of proposed TFTs exhibit high mobility (> 100 and > 3 cm
2
/Vs in case of ZnON and Te TFTs, respectively) and a stable on/off current ratio. The resulted CMOS inverter exhibits a high voltage swing and a high voltage gain of 15.89. Since all the synthesis and fabrication processes are performed at low temperatures with easy processing techniques, the results may open new opportunities in the field of integrated electronics field.</description><identifier>ISSN: 1598-0316</identifier><identifier>EISSN: 2158-1606</identifier><identifier>DOI: 10.1080/15980316.2023.2174195</identifier><language>eng</language><publisher>Seoul: Taylor & Francis</publisher><subject>Circuits ; CMOS ; CMOS inverter ; Electrical measurement ; Engineering ; Gas flow ; high mobility ; High voltages ; Inverters ; Low temperature ; Materials science ; Semiconductor devices ; Semiconductors ; Spectrum analysis ; Tellurium ; Temperature ; Thin film transistors ; Transistors ; Voltage gain ; Zinc oxides ; ZnON ; 전기공학</subject><ispartof>Journal of Information Display, 2023, 24(3), , pp.199-204</ispartof><rights>2023 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group on behalf of the Korean Information Display Society 2023</rights><rights>2023 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group on behalf of the Korean Information Display Society. This work is licensed under the Creative Commons Attribution License http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c486t-1c371cc17067631c5ee95fec94c8c1322ab8f4680121a68e560f25207edc3db83</citedby><cites>FETCH-LOGICAL-c486t-1c371cc17067631c5ee95fec94c8c1322ab8f4680121a68e560f25207edc3db83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.tandfonline.com/doi/pdf/10.1080/15980316.2023.2174195$$EPDF$$P50$$Ginformaworld$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2831678147?pq-origsite=primo$$EHTML$$P50$$Gproquest$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,25753,27502,27924,27925,37012,44590,59143,59144</link.rule.ids><backlink>$$Uhttps://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART002998245$$DAccess content in National Research Foundation of Korea (NRF)$$Hfree_for_read</backlink></links><search><creatorcontrib>Naqi, Muhammad</creatorcontrib><creatorcontrib>Jang, Seong Cheol</creatorcontrib><creatorcontrib>Cho, Yongin</creatorcontrib><creatorcontrib>Park, Ji Min</creatorcontrib><creatorcontrib>Oh, Joo On</creatorcontrib><creatorcontrib>Rho, Hyun Yeol</creatorcontrib><creatorcontrib>Kim, Hyun-Suk</creatorcontrib><creatorcontrib>Kim, Sunkook</creatorcontrib><title>Low temperature processed, highly stable CMOS inverter by integrating Zn-ON and tellurium thin-film transistors</title><title>Journal of Information Display</title><description>Semiconductors processed at low temperature for complementary metal-oxide semiconductors (CMOS) devices are receiving considerable attention in the field of integrated electronic applications. In this work, we demonstrated a CMOS inverter constructed by n-type ZnON and p-type Te TFTs where all the processes have been done at low temperature. The electrical measurements of proposed TFTs exhibit high mobility (> 100 and > 3 cm
2
/Vs in case of ZnON and Te TFTs, respectively) and a stable on/off current ratio. The resulted CMOS inverter exhibits a high voltage swing and a high voltage gain of 15.89. Since all the synthesis and fabrication processes are performed at low temperatures with easy processing techniques, the results may open new opportunities in the field of integrated electronics field.</description><subject>Circuits</subject><subject>CMOS</subject><subject>CMOS inverter</subject><subject>Electrical measurement</subject><subject>Engineering</subject><subject>Gas flow</subject><subject>high mobility</subject><subject>High voltages</subject><subject>Inverters</subject><subject>Low temperature</subject><subject>Materials science</subject><subject>Semiconductor devices</subject><subject>Semiconductors</subject><subject>Spectrum analysis</subject><subject>Tellurium</subject><subject>Temperature</subject><subject>Thin film transistors</subject><subject>Transistors</subject><subject>Voltage gain</subject><subject>Zinc oxides</subject><subject>ZnON</subject><subject>전기공학</subject><issn>1598-0316</issn><issn>2158-1606</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>0YH</sourceid><sourceid>PIMPY</sourceid><sourceid>DOA</sourceid><recordid>eNp9kUGP0zAQhSMEEtXu_gQkS9wQ6Xpsx3FurCoWKhUqwXLhYjmOnbqbxsV2WPXf4zYLR-Yyo9H3nuV5RfEG8BKwwLdQNQJT4EuCCV0SqBk01YtiQaASJXDMXxaLM1OeodfFTYx7nIs1uBGwKPzGP6FkDkcTVJqCQcfgtYnRdO_RzvW74YRiUu1g0OrL9jty428TkgmoPeU5mT6r3Nijn2O5_YrU2GWvYZiCmw4o7dxYWjfkKagxuph8iNfFK6uGaG6e-1Xx4_7jw-pzudl-Wq_uNqVmgqcSNK1Ba6gxrzkFXRnTVNbohmmhgRKiWmEZFxgIKC5MxbElFcG16TTtWkGvinez7xisfNROeuUuvffyMci7bw9rCZjihuEqw-sZ7rzay2NwBxVOF8Vl4UMvVUhOD0ZSqmkDgOu24YwJ2jIgoumwbRmuFTXZ6-3slQ_5azIxyb2fwpj_KonIEdQCWJ2paqZ08DEGY_-9Cliec5V_c5XnXOVzrln3Yda50fpwUE8-DJ1M6jT4YPOVtYuS_t_iD6ZZp6o</recordid><startdate>20230703</startdate><enddate>20230703</enddate><creator>Naqi, Muhammad</creator><creator>Jang, Seong Cheol</creator><creator>Cho, Yongin</creator><creator>Park, Ji Min</creator><creator>Oh, Joo On</creator><creator>Rho, Hyun Yeol</creator><creator>Kim, Hyun-Suk</creator><creator>Kim, Sunkook</creator><general>Taylor & Francis</general><general>Taylor & Francis Ltd</general><general>Taylor & Francis Group</general><general>한국정보디스플레이학회</general><scope>0YH</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7SC</scope><scope>7XB</scope><scope>8FD</scope><scope>8FK</scope><scope>8G5</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>M2O</scope><scope>MBDVC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>Q9U</scope><scope>DOA</scope><scope>ACYCR</scope></search><sort><creationdate>20230703</creationdate><title>Low temperature processed, highly stable CMOS inverter by integrating Zn-ON and tellurium thin-film transistors</title><author>Naqi, Muhammad ; Jang, Seong Cheol ; Cho, Yongin ; Park, Ji Min ; Oh, Joo On ; Rho, Hyun Yeol ; Kim, Hyun-Suk ; Kim, Sunkook</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c486t-1c371cc17067631c5ee95fec94c8c1322ab8f4680121a68e560f25207edc3db83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Circuits</topic><topic>CMOS</topic><topic>CMOS inverter</topic><topic>Electrical measurement</topic><topic>Engineering</topic><topic>Gas flow</topic><topic>high mobility</topic><topic>High voltages</topic><topic>Inverters</topic><topic>Low temperature</topic><topic>Materials science</topic><topic>Semiconductor devices</topic><topic>Semiconductors</topic><topic>Spectrum analysis</topic><topic>Tellurium</topic><topic>Temperature</topic><topic>Thin film transistors</topic><topic>Transistors</topic><topic>Voltage gain</topic><topic>Zinc oxides</topic><topic>ZnON</topic><topic>전기공학</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Naqi, Muhammad</creatorcontrib><creatorcontrib>Jang, Seong Cheol</creatorcontrib><creatorcontrib>Cho, Yongin</creatorcontrib><creatorcontrib>Park, Ji Min</creatorcontrib><creatorcontrib>Oh, Joo On</creatorcontrib><creatorcontrib>Rho, Hyun Yeol</creatorcontrib><creatorcontrib>Kim, Hyun-Suk</creatorcontrib><creatorcontrib>Kim, Sunkook</creatorcontrib><collection>Taylor & Francis Open Access</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>Computer and Information Systems Abstracts</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Technology Research Database</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>ProQuest Central Essentials</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>ProQuest Research Library</collection><collection>Research Library (Corporate)</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central Basic</collection><collection>DOAJ Directory of Open Access Journals</collection><collection>Korean Citation Index</collection><jtitle>Journal of Information Display</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Naqi, Muhammad</au><au>Jang, Seong Cheol</au><au>Cho, Yongin</au><au>Park, Ji Min</au><au>Oh, Joo On</au><au>Rho, Hyun Yeol</au><au>Kim, Hyun-Suk</au><au>Kim, Sunkook</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low temperature processed, highly stable CMOS inverter by integrating Zn-ON and tellurium thin-film transistors</atitle><jtitle>Journal of Information Display</jtitle><date>2023-07-03</date><risdate>2023</risdate><volume>24</volume><issue>3</issue><spage>199</spage><epage>204</epage><pages>199-204</pages><issn>1598-0316</issn><eissn>2158-1606</eissn><abstract>Semiconductors processed at low temperature for complementary metal-oxide semiconductors (CMOS) devices are receiving considerable attention in the field of integrated electronic applications. In this work, we demonstrated a CMOS inverter constructed by n-type ZnON and p-type Te TFTs where all the processes have been done at low temperature. The electrical measurements of proposed TFTs exhibit high mobility (> 100 and > 3 cm
2
/Vs in case of ZnON and Te TFTs, respectively) and a stable on/off current ratio. The resulted CMOS inverter exhibits a high voltage swing and a high voltage gain of 15.89. Since all the synthesis and fabrication processes are performed at low temperatures with easy processing techniques, the results may open new opportunities in the field of integrated electronics field.</abstract><cop>Seoul</cop><pub>Taylor & Francis</pub><doi>10.1080/15980316.2023.2174195</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Journal of Information Display, 2023, 24(3), , pp.199-204 |
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| source | Taylor & Francis Open Access; Publicly Available Content Database |
| subjects | Circuits CMOS CMOS inverter Electrical measurement Engineering Gas flow high mobility High voltages Inverters Low temperature Materials science Semiconductor devices Semiconductors Spectrum analysis Tellurium Temperature Thin film transistors Transistors Voltage gain Zinc oxides ZnON 전기공학 |
| title | Low temperature processed, highly stable CMOS inverter by integrating Zn-ON and tellurium thin-film transistors |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T21%3A33%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low%20temperature%20processed,%20highly%20stable%20CMOS%20inverter%20by%20integrating%20Zn-ON%20and%20tellurium%20thin-film%20transistors&rft.jtitle=Journal%20of%20Information%20Display&rft.au=Naqi,%20Muhammad&rft.date=2023-07-03&rft.volume=24&rft.issue=3&rft.spage=199&rft.epage=204&rft.pages=199-204&rft.issn=1598-0316&rft.eissn=2158-1606&rft_id=info:doi/10.1080/15980316.2023.2174195&rft_dat=%3Cproquest_cross%3E2831678147%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c486t-1c371cc17067631c5ee95fec94c8c1322ab8f4680121a68e560f25207edc3db83%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2831678147&rft_id=info:pmid/&rfr_iscdi=true |