Ultrahigh GaN:SiO 2 etch selectivity by in situ surface modification of SiO 2 in a Cl 2 -Ar plasma

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Bibliographic Details
Published in:Materials research letters 2021-02, Vol.9 (2), p.105-111
Main Authors: Frye, Clint D., Donald, Scott B., Reinhardt, Catherine E., Nikolic, Rebecca J., Voss, Lars F., Harrison, Sara E.
Format: Article
Language:English
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ISSN:2166-3831
2166-3831
DOI:10.1080/21663831.2020.1847735