Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees C

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Bibliographic Details
Published in:Journal of physics. C, Solid state physics Solid state physics, 1981-01, Vol.14 (3), p.295-308
Main Authors: Veprek, S, Iqbal, Z, Oswald, H R, Webb, A P
Format: Article
Language:English
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ISSN:0022-3719
DOI:10.1088/0022-3719/14/3/013