Perturbation model for the thermal-donor energy spectrum in silicon

The general features of the repulsive potential introduced by oxygen atoms successively agglomerating around 450 degrees C thermal donors is determined by fitting the ladders of energy levels for both charge states observed by infrared spectroscopy and accounting for electron-screening effects in th...

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Bibliographic Details
Published in:Journal of physics. C, Solid state physics Solid state physics, 1986-06, Vol.19 (16), p.2893-2906
Main Authors: Borenstein, J T, Corbett, J W, Herder, M, Sahu, S N, Snyder, L C
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Impurity and defect levels
Physics
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Summary:The general features of the repulsive potential introduced by oxygen atoms successively agglomerating around 450 degrees C thermal donors is determined by fitting the ladders of energy levels for both charge states observed by infrared spectroscopy and accounting for electron-screening effects in the neutral charge state. Recent evidence suggesting that the thermal-donor ground-state wavefunction is constructed from a pair of (100) valleys has been used to determine qualitative features of the perturbing potential. Directional agglomeration is seen to reproduce the experimental energy shifts, a result in accord with the view that thermal donors are nucleation sites for the subsequent formation of coesite.
ISSN:0022-3719
DOI:10.1088/0022-3719/19/16/010