Electrical properties of Bi 3.25 La 0.75 Ti 3 O 12 /LaAlO 3 /Si structures for ferroelectric field effect transistor applications

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2004-03, Vol.37 (6), p.832-835
Main Authors: Wang, Yi-Jun, Li, Ai-Dong, Wu, Di, Shao, Qi-Yue, Ling, Hui-Qin, Lu, Xu-Bin, Liu, Zhi-Guo, Ming, Nai-Ben
Format: Article
Language:English
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ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/37/6/004