Effect of STI stress on leakage and V ccmin of a sub-65 nm node low-power SRAM

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2008-10, Vol.41 (19), p.195101
Main Authors: Lee, Tung-Hsing, Fang, Yean-Kuen, Chiang, Yen-Ting, Chiu, H Y, Chen, Ming-Shing, Cheng, Osbert
Format: Article
Language:English
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ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/41/19/195101