Memory effects in thin film organic transistor characteristics

Bottom gated field effect transistors were fabricated using spun films of peripherically substituted liquid-crystalline lutetium phthalocyanine (Lu(PcR(8))(2)) molecules as active layers and the electrical characteristics were found to be sensitive to the molecular orientations depending upon the po...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2009-06, Vol.42 (12), p.125103-125103p5
Main Authors: Chaure, N B, Basova, T, Ray, A K, Gürek, Ayşe G, Ahsen, Vefa
Format: Article
Language:English
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Summary:Bottom gated field effect transistors were fabricated using spun films of peripherically substituted liquid-crystalline lutetium phthalocyanine (Lu(PcR(8))(2)) molecules as active layers and the electrical characteristics were found to be sensitive to the molecular orientations depending upon the post-deposition heat treatment of the films. High conductive states were attributed to the formation of a well ordered crystalline structure when as deposited Lu(PcR(8))(2) films were annealed at 242 deg C. Annealing at 125 deg C produced a different crystalline of lower order, giving rise to low conductive states. The existence of these two well-defined conducting states makes Lu(PcR(8))(2) films suitable for the fabrication of storage-class memory devices.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/42/12/125103