Origins of flash lamp annealing induced p–n junction leakages in a 45 nm p-MOSFET with strained SiGe source/drain

The effects of flash lamp annealing (FLA) on source/drain (S/D) junction leakage of a 45 nm deep-submicrometre p-MOSFET with strained SiGe S/D were investigated in detail. Based on activation energy measurements, we analyse the origins of the junction leakage currents. Without FLA, the junction leak...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2009-05, Vol.42 (9), p.095107
Main Authors: Cheng, C Y, Fang, Y K, Hsieh, J C, Hsia, H, Lin, S S, Hou, C S, Ku, K C, Sheu, Y M
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:The effects of flash lamp annealing (FLA) on source/drain (S/D) junction leakage of a 45 nm deep-submicrometre p-MOSFET with strained SiGe S/D were investigated in detail. Based on activation energy measurements, we analyse the origins of the junction leakage currents. Without FLA, the junction leakage is dominated by the trap generation current, while with FLA the leakage current is facilitated by both trap generation and band-to-band tunnelling under low and high reverse biases, respectively.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/42/9/095107