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A frequency-tunable cloak with semiconducting constituents
A frequency-tunable cloak with semiconducting constituents has been proposed by modifying the dielectric constant by externally controlling the free-carrier density. We have theoretically studied that the cloaking frequency of a single-layer shell consisting of intrinsic InSb can be tuned by varying...
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Published in: | Journal of physics. D, Applied physics Applied physics, 2010-05, Vol.43 (17), p.175404-175404 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A frequency-tunable cloak with semiconducting constituents has been proposed by modifying the dielectric constant by externally controlling the free-carrier density. We have theoretically studied that the cloaking frequency of a single-layer shell consisting of intrinsic InSb can be tuned by varying the temperature based on the Mie scattering theory. The calculated results show that this tunable cloak has a large bandwidth of over 0.3 THz, a tunability of cloaking frequency of 17 GHz K-1 with temperature and a dramatic reduction in the total scattering cross section of 90% at cloaking frequencies. It is also possible to realize a tunable cloak of extrinsic semiconductor Ge by changing the impurity density with current injection. |
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ISSN: | 0022-3727 1361-6463 |
DOI: | 10.1088/0022-3727/43/17/175404 |