Modelling of an InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission by the k.p method

The electronic band structure and optical gain of an InAs/GaSb/InSb short-period superlattice laser diode on a GaSb substrate are numerically investigated with an accurate 8 × 8 k.p model. Using a realistic graded and asymmetric interface profile, we obtain a reasonable agreement on band gap energy...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2010-08, Vol.43 (32), p.325102-325102
Main Authors: Rejeb, S Ben, Debbichi, M, Said, M, Gassenq, A, Tournié, E, Christol, P
Format: Article
Language:English
Subjects:
Electronics
Engineering Sciences
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gain
Indium antimonides
Indium arsenides
Intermetallics
Laser diodes
Lasers
Mathematical models
Optics
Physics
Semiconductor lasers
laser diodes
Superlattices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The electronic band structure and optical gain of an InAs/GaSb/InSb short-period superlattice laser diode on a GaSb substrate are numerically investigated with an accurate 8 × 8 k.p model. Using a realistic graded and asymmetric interface profile, we obtain a reasonable agreement on band gap energy with our experimental data extracted from laser emissions performed on the laser diode. The optical performance in terms of optical gain is then calculated for the laser structure and we demonstrate the utility of interface design to model short-period superlattice structures.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/43/32/325102