Solar-blind wurtzite MgZnO alloy films stabilized by Be doping

MgxZn1−xO alloy films were deposited on c-plane sapphire substrates by radio frequency plasma-assisted molecular beam epitaxy (rf-PMBE). The phase segregation occurred when x was larger than 33%. Be doping was found experimentally able to stabilize the high-Mg-content MgZnO alloy. By alloying 1-2% B...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2013-06, Vol.46 (24), p.245103-1-4
Main Authors: Su, Longxing, Zhu, Yuan, Zhang, Quanlin, Chen, Mingming, Ji, Xu, Wu, Tianzhun, Gui, Xuchun, Pan, Bicai, Xiang, Rong, Tang, Zikang
Format: Article
Language:English
Subjects:
Alloy systems
Alloying
Cross-disciplinary physics: materials science
rheology
Deposition
Doping
Energy of formation
Exact sciences and technology
Materials science
Mathematical analysis
Methods of deposition of films and coatings
film growth and epitaxy
Molecular beam epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Segregations
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Summary:MgxZn1−xO alloy films were deposited on c-plane sapphire substrates by radio frequency plasma-assisted molecular beam epitaxy (rf-PMBE). The phase segregation occurred when x was larger than 33%. Be doping was found experimentally able to stabilize the high-Mg-content MgZnO alloy. By alloying 1-2% Be into MgZnO, the band gap of as-prepared quaternary alloys can be raised to the solar-blind range (4.5 eV). Calculated formation energy of the alloys based on first principle reveals that a small amount of Be incorporation can reduce the formation energy of high-Mg-content MgZnO alloys and results in a more stable system, which justifies our experimental observations.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/46/24/245103