Diamond field effect transistors with a high-dielectric constant Ta 2 O 5 as gate material

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2014-06, Vol.47 (24), p.245102
Main Authors: Liu, J-W, Liao, M-Y, Imura, M, Watanabe, E, Oosato, H, Koide, Y
Format: Article
Language:English
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ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/47/24/245102