Nonuniform radiative recombination in n − i − p LED

Radiative recombination of InAs/GaSb superlattice (SL) n − i − p light emitting diodes (LED) was studied theoretically and experimentally. It is shown that recombination takes place not uniformly in the whole SL i region but in a very close vicinity of the p contact. The physics behind this is the f...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2015-02, Vol.48 (4), p.45106-11
Main Authors: Laikhtman, B, Suchalkin, S, Westerfeld, D, Belenky, G
Format: Article
Language:English
Subjects:
Contact
Diffusion coefficient
Electric contacts
Electric fields
Falling
Indium arsenides
Light-emitting diodes
Nonuniform
Radiative recombination
transport in superlattices
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Summary:Radiative recombination of InAs/GaSb superlattice (SL) n − i − p light emitting diodes (LED) was studied theoretically and experimentally. It is shown that recombination takes place not uniformly in the whole SL i region but in a very close vicinity of the p contact. The physics behind this is the formation of high electric field and high carrier concentration domains in a biased device near SL interfaces with the contacts. As a result, in narrow hole miniband the hole vertical diffusion coefficient falling off with the electric field is so small that holes are confined very close to the p contact. This reduces the effective recombination area to 1-2 periods of the SL.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/48/4/045106