Post-annealing-free, room temperature processed nanocrystalline indium tin oxide thin films for plastic electronics

In this study, we confirm that bombardment by high energy negative oxygen ions (NOIs) is the key origin of electro-optical property degradations in indium tin oxide (ITO) thin films formed by conventional plasma sputtering processes. To minimize the bombardment effect of NOIs, which are generated on...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2016-05, Vol.49 (21), p.215303-215309
Main Authors: Jang, Jin Nyoung, Lee, You Jong, Jang, YunSung, Yun, JangWon, Yi, Seungjun, Hong, MunPyo
Format: Article
Language:English
Subjects:
Arrays
Barriers
Electrooptical
gas barrier
Gas diffusion
Indium tin oxide
magnetic field shielded sputtering
nanocrystal embedded amorphous phase
Nanocrystals
room temperature process
Sputtering
Thin films
transparent conductive oxide
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Summary:In this study, we confirm that bombardment by high energy negative oxygen ions (NOIs) is the key origin of electro-optical property degradations in indium tin oxide (ITO) thin films formed by conventional plasma sputtering processes. To minimize the bombardment effect of NOIs, which are generated on the surface of the ITO targets and accelerated by the cathode sheath potential on the magnetron sputter gun (MSG), we introduce a magnetic field shielded sputtering (MFSS) system composed of a permanent magnetic array between the MSG and the substrate holder to block the arrival of energetic NOIs. The MFSS processed ITO thin films reveal a novel nanocrystal imbedded polymorphous structure, and present not only superior electro-optical characteristics but also higher gas diffusion barrier properties. To the best of our knowledge, no gas diffusion barrier composed of a single inorganic thin film formed by conventional plasma sputtering processes achieves such a low moisture permeability.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/49/21/215303