Effect of III/V Ratio of HT-AlN Buffer Layer on Polarity Selection and Electrical Quality of GaN Films Grown by Radio Frequency Molecular Beam Epitaxy

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Bibliographic Details
Published in:Chinese physics letters 2007-01, Vol.24 (1), p.240-243
Main Authors: Fei, Zhong, Kai, Qiu, Xin-Hua, Li, Zhi-Jun, Yin, Xin-Jian, Xie, Yang, Wang, Chang-Jian, Ji, Xian-Cun, Cao, Qi-Feng, Han, Jia-Rong, Chen, Yu-Qi, Wang
Format: Article
Language:English
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/24/1/065