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Effect of Post-Annealing on Microstructural and Electrical Properties of N+ Ion-Implanted into ZnO:In Films

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Bibliographic Details
Published in:Chinese physics letters 2008-03, Vol.25 (3), p.1128-1130
Main Authors: Chun-Yang, Kong, Guo-Ping, Qin, Hai-Bo, Ruan, Mao, Nan, Ren-Jiang, Zhu, Te-Li, Dai
Format: Article
Language:English
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/25/3/087