Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours

We report our recent progress of investigations on InGaN-based blue-violet laser diodes （LDs）. The roomtemperature （RT） cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing （FS） GaN substrate by metal organic chemical vapor deposition...

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Bibliographic Details
Published in:Chinese physics letters 2010-11, Vol.27 (11), p.129-132, Article 114215
Main Author: 曾畅 张书明 季莲 王怀兵 赵德刚 朱建军 刘宗顺 江德生 曹青 种明 段俐宏 王海 史永生 刘素英 杨辉 陈良惠
Format: Article
Language:English
Subjects:
化学气相沉积法
氮化铟镓
激光二极管
蓝紫色
运行寿命
连续波
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Summary:We report our recent progress of investigations on InGaN-based blue-violet laser diodes （LDs）. The roomtemperature （RT） cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing （FS） GaN substrate by metal organic chemical vapor deposition （MOCVD）. The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efticiency of multiple quantum well （MQW）, respectively.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/27/11/114215