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Effect of Indium Ambient on Electrical Properties of Mg-Doped Al x Ga 1− x N

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Bibliographic Details
Published in:Chinese physics letters 2010-12, Vol.27 (12), p.127304
Main Authors: Xu, Zheng-Yu, Qin, Zhi-Xin, Sang, Li-Wen, Zhang, Yan-Zhao, Shen, Bo, Zhang, Guo-Yi, Zhao, Lan, Zhang, Xiang-Feng, Cheng, Cai-Jing, Sun, Wei-Guo
Format: Article
Language:English
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/27/12/127304