Growth of Few-Layer Graphene on Sapphire Substrates by Directly Depositing Carbon Atoms

Few-layer graphene (FLG) is successfully grown on sapphire substrates by directly depositing carbon atoms at the substrate temperature of 1300[degrees]C in a molecular beam epitaxy chamber. The reflection high energy diffraction, Raman spectroscopy and near-edge x-ray absorption Gne structure are us...

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Bibliographic Details
Published in:Chinese physics letters 2011-11, Vol.28 (11), p.118101-1-118101-3
Main Authors: Kang, Chao-Yang (朝阳 康), Tang, Jun (军唐), Liu, Zhong-Liang (忠良 刘), Li, Li-Min (利民 李), Yan, Wen-Sheng (文盛 闫), Wei, Shi-Qiang (世强 韦), Xu, Peng-Shou (彭寿 徐)
Format: Article
Language:English
Subjects:
Carbon
Deposition
Diffraction
Displays
Graphene
Molecular beam epitaxy
Reflection
Sapphire
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Summary:Few-layer graphene (FLG) is successfully grown on sapphire substrates by directly depositing carbon atoms at the substrate temperature of 1300[degrees]C in a molecular beam epitaxy chamber. The reflection high energy diffraction, Raman spectroscopy and near-edge x-ray absorption Gne structure are used to characterize the sample, which conGrm the formation of graphene layers. The mean domain size of FLG is around 29.2 nm and the layer number is about 2-3. The results demonstrate that the grown FLG displays a turbostratic stacking structure similar to that of the FLG produced by annealing C-terminated alpha -SiC surface.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/28/11/118101