CMOS Compatible Nonvolatile Memory Devices Based on SiO 2 /Cu/SiO 2 Multilayer Films

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Bibliographic Details
Published in:Chinese physics letters 2011-07, Vol.28 (7), p.77201
Main Authors: Wang, Yan, Liu, Qi, Lu, Hang-Bing, Long, Shi-Bing, Zhang, Sen, Li, Ying-Tao, Lian, Wen-Tai, Yang, Jian-Hong, Liu, Ming
Format: Article
Language:English
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/28/7/077201