Improvement of the Quality of a GaN Epilayer by Employing a SiN x Interlayer

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Bibliographic Details
Published in:Chinese physics letters 2012-08, Vol.29 (8), p.88102
Main Authors: Yang, De-Chao, Liang, Hong-Wei, Song, Shi-Wei, Liu, Yang, Shen, Ren-Sheng, Luo, Ying-Min, Zhao, Hai-Feng, Du, Guo-Tong
Format: Article
Language:English
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/29/8/088102