Design of an Electrically Written and Optically Read Non-volatile Memory Device Employing BiFeO 3 /Au Heterostructures with Strong Absorption Resonance

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Bibliographic Details
Published in:Chinese physics letters 2015-07, Vol.32 (7), p.74204
Main Authors: Xiao, Peng-Bo, Zhang, Wei, Qu, Tian-Liang, Huang, Yun, Hu, Shao-Min
Format: Article
Language:English
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/7/074204