Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes

The effect of back-diffusion of Mg dopants on optoelectronic characteristics of InGaN-based green light-emitting diodes （LEDs） is investigated. The LEDs with less Mg back-diffusion show blue shifts of longer wavelengths and larger wavelengths with the increasing current, which results from the Mg-do...

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Bibliographic Details
Published in:Chinese physics letters 2016-11, Vol.33 (11), p.96-98
Main Author: 张宁 魏学成 路坤熠 冯梁森 杨杰 薛斌 刘喆 李晋闽 王军喜
Format: Article
Language:English
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Summary:The effect of back-diffusion of Mg dopants on optoelectronic characteristics of InGaN-based green light-emitting diodes （LEDs） is investigated. The LEDs with less Mg back-diffusion show blue shifts of longer wavelengths and larger wavelengths with the increasing current, which results from the Mg-dopant-related polarization screening. The LEDs show enhanced efficiency with the decreasing Mg back-diffusion in the lower current region. Light outputs follow the power law L α I^m, with smaller parameter m in the LEDs with less Mg back-diffusion, indicating a lower density of trap states. The trap-assisted tunneling current is also suppressed by reducing Mg- defect-related nonradiative centers in the active region. Furthermore, the forward current-voltage characteristics are improved.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/33/11/117302