Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological application...

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Bibliographic Details
Published in:Chinese physics letters 2017-03, Vol.34 (4), p.87-91
Main Author: 颜世莉 谢志坚 陈剑豪 Takashi Taniguchi Kenji Watanabe
Format: Article
Language:English
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Summary:The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus （BP） by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10 V/nm to 0.83 V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronies, thermoelectric power generation and thermal imaging.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/34/4/047304