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Enhanced Efficiency of Metamorphic Triple Junction Solar Cells for Space Applications
Metamorphic In0.55Ga0.45P/In0.06Ga0.94As/Ge triple-junction (3J-MM) solar cells are grown on Ge (100) sub- strates via metal organic chemical vapor deposition. Epi-structural analyses such as high resolution x-ray diffrac- tion, photoluminence, cathodoluminescence and HRTEM are employed and the resu...
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Published in: | Chinese physics letters 2017-06, Vol.34 (6), p.126-130 |
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Main Author: | |
Format: | Article |
Language: | English |
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Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Metamorphic In0.55Ga0.45P/In0.06Ga0.94As/Ge triple-junction (3J-MM) solar cells are grown on Ge (100) sub- strates via metal organic chemical vapor deposition. Epi-structural analyses such as high resolution x-ray diffrac- tion, photoluminence, cathodoluminescence and HRTEM are employed and the results show that the high crystal quality of 3J-MM solar cells is obtained with low threading dislocation density of graded buffer (an average value of 6.8× 10^4/cm2). Benefitting from the optimized bandgap combination, under one sun, AM0 spectrum, 25℃ conditions, the conversion efficiency is achieved about 32%, 5% higher compared with the lattice-matched In0.49Ga0.51P/In0.01Ga0.99As/Ge triple junction (3J-LM) solar cell. Under 1-MeV electron irradiation test, the degradation of the EQE and I-V characteristics of 3J-MM solar cells is at the same level as the 33-LM solar cell. The end-of-life efficiency is -27.1%. Therefore, the metamorphic triple-junction solar cell may be a promising candidate for next-generation space multi-junction solar cells. |
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ISSN: | 0256-307X 1741-3540 |
DOI: | 10.1088/0256-307X/34/6/068801 |