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Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate Insulator

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Bibliographic Details
Published in:Chinese physics letters 2018-04, Vol.35 (4), p.48502
Main Authors: Chen, Ya-Yi, Liu, Yuan, Wu, Zhao-Hui, Wang, Li, Li, Bin, En, Yun-Fei, Chen, Yi-Qiang
Format: Article
Language:English
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/35/4/048502