Mid-Infrared InAs/GaSb Superlattice Planar Photodiodes Fabricated by Metal–Organic Chemical Vapor Deposition

Mid-wavelength infrared planar photodiodes were demonstrated, in which both the epitaxy growth of InAs/GaSb superlattices and the thermal diffusion of p-type dopant were performed in production-scale metal–organic chemical vapor deposition reactors. The formation of a planar homojunction was confirm...

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Bibliographic Details
Published in:Chinese physics letters 2020-06, Vol.37 (6), p.68501
Main Authors: Zhao, Yu, Teng, Yan, Miao, Jing-Jun, Wu, Qi-Hua, Gao, Jing-Jing, Li, Xin, Hao, Xiu-Jun, Zhao, Ying-Chun, Dong, Xu, Xiong, Min, Huang, Yong
Format: Article
Language:English
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Summary:Mid-wavelength infrared planar photodiodes were demonstrated, in which both the epitaxy growth of InAs/GaSb superlattices and the thermal diffusion of p-type dopant were performed in production-scale metal–organic chemical vapor deposition reactors. The formation of a planar homojunction was confirmed by secondary ion mass spectroscopy and its I – V characteristics. A cut-off wavelength around 5 μm was determined in 77 K optical characterization, and photo-current as high as 600 nA was collected from a reverse-biased planar diode of 640 μm diameter. These preliminary results were obtained despite the structural degradation revealed by x-ray diffraction, and we attribute the degradation to the concert of thermal annealing and high Zn concentration behind the diffusion front.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/37/6/068501