Pressure-Tuned Intrinsic Anomalous Hall Conductivity in Kagome Magnets RV 6 Sn 6 (R = Gd, Tb)

• Published in: Chinese physics letters 2024-04, Vol.41 (4), p.47503
• Main Authors: Kong 孔, Xiangming 祥明, Tao 陶, Zicheng 咨成, Zhang 张, Rui 蕊, Xia 夏, Wei 威, Chen 陈, Xu 旭, Pei 裴, Cuiying 翠颖, Ying 应, Tianping 天平, Qi 齐, Yanpeng 彦鹏, Guo 郭, Yanfeng 艳峰, Yang 杨, Xiaofan 小帆, Li 李, Shiyan 世燕
• Format: Article
• Language: English
• ISSN: 0256-307X; 1741-3540
• DOI: 10.1088/0256-307X/41/4/047503

Exploration of exotic phenomena in magnetic topological systems is at the frontier of condensed matter physics, holding a significant promise for applications in topological spintronics. However, complex magnetic structures carrying nontrivial topological properties hinder its progresses. Here, we investigate the pressure effect on the novel topological kagome magnets GdV 6 Sn 6 and TbV 6 Sn 6 to dig out the interplay between magnetic Gd/Tb layers and nonmagnetic V-based kagome sublattice. The pressure-tuned magnetic transition temperature T m in both the compounds exhibit a turning point at the critical pressure P c , accompanied with a sign reversal in anomalous Hall effect (AHE). The separation of intrinsic and extrinsic contributions using the Tian–Ye–Jin scaling model suggests that the intrinsic mechanism originating from the electronic Berry curvature holds the priority in the competition with extrinsic mechanism in AHE. The above-mentioned findings can be attributed to the combined effect of pressure-tuned band topology and magnetic interaction in segregated layers. Our results provide a practical route to design and manipulate the intrinsic AHE in magnetic topological materials.