Influence of the substrate bias on epitaxial growth of Si films by dc-discharge plasma chemical vapour deposition

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Bibliographic Details
Published in:Semiconductor science and technology 1998-12, Vol.13 (12), p.1426-1430
Main Authors: Mateeva, E, Sutter, P
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/13/12/016