Gate oxide reliability projection to the sub-2 nm regime

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Bibliographic Details
Published in:Semiconductor science and technology 2000-05, Vol.15 (5), p.455-461
Main Authors: Weir, B E, Alam, M A, Bude, J D, Silverman, P J, Ghetti, A, Baumann, F, Diodato, P, Monroe, D, Sorsch, T, Timp, G L, Ma, Y, Brown, M M, Hamad, A, Hwang, D, Mason, P
Format: Article
Language:English
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/15/5/304