Comprehensive study of InGaP/Al x Ga 1  x As/GaAs heterojunction bipolar transistors with different doping concentrations of Al x Ga 1  x As graded layers

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Bibliographic Details
Published in:Semiconductor science and technology 2004-03, Vol.19 (3), p.351-358
Main Authors: Cheng, Shiou-Ying, Chen, Jing-Yuh, Chen, Chun-Yuan, Chuang, Hung-Ming, Yen, Chih-Hung, Lee, Kuan-Ming, Liu, Wen-Chau
Format: Article
Language:English
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/19/3/010