Concentration profiles of antimony-doped shallow layers in silicon

Saved in:
Bibliographic Details
Published in:Semiconductor science and technology 2004-06, Vol.19 (6), p.728-732
Main Authors: Alzanki, T, Gwilliam, R, Emerson, N, Tabatabaian, Z, Jeynes, C, Sealy, B J
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Conductivity phenomena in semiconductors and insulators
Defects and impurities in crystals
microstructure
Doping and impurity implantation in germanium and silicon
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
Structure of solids and liquids
crystallography
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/19/6/012