Effect of free-carrier absorption on performance of 808 nm AlGaAs-based high-power laser diodes

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Bibliographic Details
Published in:Semiconductor science and technology 2007-05, Vol.22 (5), p.502-510
Main Authors: Bulashevich, K A, Mymrin, V F, Karpov, S Yu, Demidov, D M, Ter-Martirosyan, A L
Format: Article
Language:English
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/22/5/008