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Frequency-dependent electrical properties in Bi(Zn 0.5 Ti 0.5 )O 3 doped Pb(Zr 0.4 Ti 0.6 )O 3 thin film for ferroelectric memory application

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Bibliographic Details
Published in:Semiconductor science and technology 2010-03, Vol.25 (3), p.35006
Main Authors: Tang, M H, Dong, G J, Sugiyama, Y, Ishiwara, H
Format: Article
Language:English
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/25/3/035006