Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon

We report on the formation of a lightly doped p--n junction at the surface of compensated p-type silicon wafers, caused by dopant segregation during thermal oxidation. Experimental evidence and characterization of the junction is obtained by secondary ion mass spectrometry and hot probe measurements...

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Bibliographic Details
Published in:Semiconductor science and technology 2010-05, Vol.25 (5), p.055009-055009, Article 055009
Main Authors: Rougieux, F E, Macdonald, D, McIntosh, K R, Cuevas, A
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Crystal structure
Dopants
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
Oxidation
Physics
Secondary ion mass spectrometry
Segregations
Semiconductors
Silicon
Simulation
Wafers
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Summary:We report on the formation of a lightly doped p--n junction at the surface of compensated p-type silicon wafers, caused by dopant segregation during thermal oxidation. Experimental evidence and characterization of the junction is obtained by secondary ion mass spectrometry and hot probe measurements. For the first time the impact of the unexpected junction on the characterization of metal-oxide-semiconductor structures with capacitance--voltage measurements is measured and explained via simulation.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/25/5/055009