Fabrication and theoretical analysis of GaN-based vertical light-emitting diodes with SiO 2 current blocking layer

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Bibliographic Details
Published in:Semiconductor science and technology 2011-09, Vol.26 (9), p.95008
Main Authors: Bae, Seong-Ju, Choi, JeHyuk, Kim, Dong-Hyun, Ju, In-Chan, Shin, Chan-Soo, Ko, Chul-Gi, Yu, Jae-Su
Format: Article
Language:English
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/26/9/095008