Contact-geometry engineering in a circular light-emitting diode (LED) for improved electrical and optical performances

GaN light-emitting diodes (LEDs) based on circular mesa structure are fabricated and their electrical and optical characterizations are performed. The uniform current flow in the circular LED (C-LED) was conducted in the radial direction, from the n-type GaN island electrode at the center to the p-t...

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Bibliographic Details
Published in:Semiconductor science and technology 2013-01, Vol.28 (1), p.15006
Main Authors: Park, Yun Soo, Lee, Hwan Gi, Yang, Chung-Mo, Kim, Dong-Seok, Bae, Jin-Hyuk, Cho, Seongjae, Lee, Jung-Hee, Kang, In Man
Format: Article
Language:English
Subjects:
Applied sciences
circular LED
current spreading
Electronics
Exact sciences and technology
GaN
light-emitting diode (LED)
Materials
optical output power
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:GaN light-emitting diodes (LEDs) based on circular mesa structure are fabricated and their electrical and optical characterizations are performed. The uniform current flow in the circular LED (C-LED) was conducted in the radial direction, from the n-type GaN island electrode at the center to the p-type GaN ring electrode around the perimeter. The symmetric electrode structuring substantially improved the electrical and optical performances. The operating voltage for C-LED at a reference current (100 mA) was 20.9% lower than that of a conventionally structured LED (CV-LED). Also, C-LED showed 19.4% higher optical output power than CV-LED.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/28/1/015006