Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures

Developer-based wet chemical etch of nearly lattice-matched InAlGaN/GaN heterostructures (HEMT-like) has been studied in detail by means of Rutherford backscattering spectroscopy, x-ray diffraction, atomic force microscopy and reciprocal space mapping (RSM). Etch isotropy depended on the rms surface...

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Bibliographic Details
Published in:Semiconductor science and technology 2013-05, Vol.28 (5), p.55007
Main Authors: Brazzini, T, Tadjer, M J, Ga evi, Pandey, S, Cavallini, A, Calle, F
Format: Article
Language:English
Subjects:
AlInGaN
Applied sciences
Electronics
Exact sciences and technology
HEMT
InAlGaN
nitride quaternary
preferential etching
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
wet etching
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Summary:Developer-based wet chemical etch of nearly lattice-matched InAlGaN/GaN heterostructures (HEMT-like) has been studied in detail by means of Rutherford backscattering spectroscopy, x-ray diffraction, atomic force microscopy and reciprocal space mapping (RSM). Etch isotropy depended on the rms surface roughness of the as-grown material. The profiles of etched samples varied in crack density, giving rise to island-like structures. We found that a possible reason for the preferential etching can be ascribed to the dislocations present in the quaternary layers originating in the underlying GaN. Moreover, the etched material suffers crystal relaxation as confirmed by RSM.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/28/5/055007