[h h l]Orientation dependence of optoelectronic properties in InAsN/GaSb quantum well laser diodes with W and M design

In this work, we present a theoretical analysis of the anisotropic hole subband states and optical gain spectra for various growth directions [h h l] such as [0 0 1], [1 1 0], [1 1 2], [1 1 3] and [1 1 1] of dilute-nitride InAs1-x Nx /GaSb with a 'W' and 'M' design. We show that...

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Bibliographic Details
Published in:Semiconductor science and technology 2013-06, Vol.28 (6), p.65006
Main Authors: Ahmed, A Ben, Ridene, S, Debbichi, M, Saïd, M, Bouchriha, H
Format: Article
Language:English
Subjects:
effective mass
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
mid-infrared laser diodes
optical gain
Optics
Physics
Semiconductor lasers
laser diodes
subband structure
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Summary:In this work, we present a theoretical analysis of the anisotropic hole subband states and optical gain spectra for various growth directions [h h l] such as [0 0 1], [1 1 0], [1 1 2], [1 1 3] and [1 1 1] of dilute-nitride InAs1-x Nx /GaSb with a 'W' and 'M' design. We show that the dispersion relation of hole subband states, hole effective mass, optical gain and threshold current density in [1 1 1] direction differ considerably from the other directions in particular the habitual direction [0 0 1]. There is a slight difference between the results of optical and modal gain for the other [1 1 0], [1 1 2] and [1 1 3] growth directions. Finally, we can predict that the optical performance of the 'M' design structure is more convenient for an emission in the mid-infrared (MIR) than that of the 'W' QW structure for x = 0.02.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/28/6/065006