Working toward high-power GaN/InGaN heterojunction bipolar transistors

III-nitride (III-N) heterojunction bipolar transistors (HBTs) are a less-explored electronic device technology due to the myriad research issues in material growth, device design and fabrication associated with these devices. For III-N HBTs, npn-GaN InGaN heterostructures provide the benefits of mit...

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Bibliographic Details
Published in:Semiconductor science and technology 2013-07, Vol.28 (7), p.74025
Main Authors: Shen, Shyh-Chiang, Dupuis, Russell D, Lochner, Zachery, Lee, Yi-Che, Kao, Tsung-Ting, Zhang, Yun, Kim, Hee-Jin, Ryou, Jae-Hyun
Format: Article
Language:English
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Summary:III-nitride (III-N) heterojunction bipolar transistors (HBTs) are a less-explored electronic device technology due to the myriad research issues in material growth, device design and fabrication associated with these devices. For III-N HBTs, npn-GaN InGaN heterostructures provide the benefits of mitigating the poor base electrical conductivity of p-type GaN and the problematic magnesium incorporation issues. Consequently, InGaN-base III-N HBTs are promising for next-generation high-power RF III-N systems. This paper will describe the current development status of npn GaN InGaN HBTs grown either on sapphire or free-standing (FS) GaN substrates using optimized metalorganic chemical vapor deposition (MOCVD) and refined HBT processing techniques. Recombination current paths in GaN InGaN HBTs are studied and small-signal equivalent circuits are developed. The extracted device model indicates that, with further device fabrication technique development, Johnson's figure of merit (JFOM) of GaN InGaN HBTs can be as high as 5 THz V.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/28/7/074025