Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiN x /AlGaN/GaN metal-insulator-semiconductor structure

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Bibliographic Details
Published in:Semiconductor science and technology 2016-06, Vol.31 (6), p.65014
Main Authors: Bao, Qilong, Huang, Sen, Wang, Xinhua, Wei, Ke, Zheng, Yingkui, Li, Yankui, Yang, Chengyue, Jiang, Haojie, Li, Junfeng, Hu, Anqi, Yang, Xuelin, Shen, Bo, Liu, Xinyu, Zhao, Chao
Format: Article
Language:English
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/31/6/065014