Transverse currents and contact resistances in the quantum Hall regime of Si-MOS structures

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Bibliographic Details
Published in:Semiconductor science and technology 1990-11, Vol.5 (11), p.1088-1092
Main Authors: Nachtwei, G, Breitlow, C, Salchow, O, Kruger, H, Hermann, R
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/5/11/003