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Subband dependent mobilities and carrier saturation mechanisms in thin Si doping layers in GaAs in the high density limit

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Bibliographic Details
Published in:	Semiconductor science and technology 1991-06, Vol.6 (6), p.535-546
Main Authors:	Skuras, E, Kumar, R, Williams, R L, Strading, R A, Dmochowski, J E, Johnson, E A, Mackinnon, A, Harris, J J, Beall, R B, Skierbeszewski, C, Singleton, J, Wel, P J van der, Wisniewski, P
Format:	Article
Language:	English
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Galvanomagnetic and other magnetotransport effects Physics
Citations:	Items that this one cites Items that cite this one
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