X-ray topography and diffractometry of strained layer heteroepitaxial structures

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Bibliographic Details
Published in:Semiconductor science and technology 1992-01, Vol.7 (1A), p.A158-A162, Article A158
Main Authors: Barnett, S J, Keir, A M, Emeny, M
Format: Article
Language:English
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/7/1A/030