A back-gated high electron mobility transistor utilizing a p-type doped layer

A technique for fabricating back-gated high electron mobility transistors (HEMTS) with large low-temperature mobilities is reported. The device consists of a normal MBE-grown tow-dimensional electron gas structure (2DEG), optimized for low-temperature transport, grown on top of a p-type doped GaAs b...

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Bibliographic Details
Published in:Semiconductor science and technology 1993-08, Vol.8 (8), p.1596-1598
Main Authors: Churchill, A C, Grimshaw, M P, Ritchie, D A, Linfield, E H, Jones, G A C
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:A technique for fabricating back-gated high electron mobility transistors (HEMTS) with large low-temperature mobilities is reported. The device consists of a normal MBE-grown tow-dimensional electron gas structure (2DEG), optimized for low-temperature transport, grown on top of a p-type doped GaAs back-gate, the two layers being separated by a AlGaAs barrier. After optical lithography to define a mesa, standard n- and p-type contacts are used to make ohmic contacts to the electron gas and p-type back-gate respectively. No additional specialized processing is necessary. The p-type doped back-gate together with the n-type ohmic contacts to the electron gas formed a p-n junction and had a corresponding diode current-voltage characteristic; thus at low temperatures it was found that the electron density could be varied in a region where the leakage of the gate was minimal.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/8/8/018